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High Current IGBT
Short Circuit SOA Capability
IXSK 80N60B IXSX 80N60B
VCES IC25
VCE(sat)
= 600 V = 160 A = 2.5 V
Symbol VCES VCGR VCES VGEM IC25 IC90 IL(RMS) ICM SSOA (RBSOA) tsc SCSOA PC TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC TC TC TC = = = = 25C 90C 90C 25C, 1 ms (silicon chip capability) (silicon chip capability) (silicon chip capability)
Maximum Ratings 600 600 20 30 160 80 75 300 ICM = 160 @ 0.8 VCES 10 500 -55 ... +150 150 -55 ... +150 V V V V A A A A A s W C C C C
PLUS 247TM (IXSX)
G
(TAB) C E
TO-264 AA (IXSK)
VGE = 15 V, TVJ = 125C, RG = 5 Clamped inductive load VGE = 15 V, VCE = 0.6 VCES, TJ = 125C RG = 5 , non-repetitive TC = 25C
G C E
(TAB)
G = Gate C = Collector
E = Emitter TAB = Collector
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264
300
0.4/6 Nm/lb.in. 6 10 g g
Features ! International standard packages ! Very high current, fast switching IGBT ! Low VCE(sat) - for minimum on-state conduction losses ! MOS Gate turn-on - drive simplicity Applications ! AC motor speed control ! DC servo and robot drives ! DC choppers ! Uninterruptible power supplies (UPS) ! Switch-mode and resonant-mode power supplies Advantages ! PLUS 247TM package for clip or spring mounting ! Space savings ! High power density
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 4 TJ = 25C TJ = 125C 8 200 2 200 2.5 V V A mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 500 A, VGE = 0 V = 8 mA, VCE = VGE
VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
(c) 2002 IXYS All rights reserved
98721B (07/02)
IXSK 80N60B IXSX 80N60B
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 52 S PLUS 247TM Outline
gfs
IC
= 60 A; VCE = 10 V,
Pulse test, t 300 s, duty cycle 2 % Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ =125C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG IC = IC90, VGE = 15 V, VCE = 0.5 VCES VCE = 25 V, VGE = 0 V, f = 1 MHz 6600 660 196 240 85 90 60 45 140 180 4.2 280 280 pF pF pF nC nC nC ns ns ns ns
A A1 A2 b b1 b2 C D E e L L1 Q R Dim.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
7.0 mJ
td(on) tri Eon td(off) tfi Eoff RthJC RthCK
60 60 4.8 190 260 6.7
ns ns mJ ns ns mJ 0.26 K/W
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
TO-264 AA Outline
0.15
K/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83
Min.
Inches Max.
.190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1

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